Dr. Kumari Nibha Priyadarshani


Dr. Kumari Nibha Priyadarshani

Assistant Professor
Department of Electronics & Communication Engineering
Motilal Nehru National Institute of Technology Allahabad, Prayagraj, India-211004
E-mail: knpriya[at]mnnit[dot]ac[dot]in
Telephone: .(O)

Research Publications

Articles

2025

  1. • Singh, K.; Mishra, R. A. and Priyadarshani, K. N. Design and analysis of trigate Ge pocket vertical tunnel FET for enhanced drive current. In Materials Science and Engineering: B, 315: 118096, 2025

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2023

  1. • Priyadarshani, K. N. and Singh, S. RF and linearity distortion performance estimation of dopingless symmetric tunnel FET (DLSTFET). In International Journal of Electronics, 110 (3): 463-478, 2023.

  2. • Priyadarshani, K. N.; Singh, S. and Mohammed, M. KA Dielectric/charge density modulated junctionless FET based label-free biosensor. In Inorganic Chemistry Communications, 148: 110350, 2023.

  3. • Priyadarshani, K. N. and Singh, S. Ultra sensitive breast cancer cell lines detection using dual nanocavities engraved junctionless FET. In IEEE Transactions on NanoBioscience, 22 (4): 889-896, 2023.

2022

  1. • Priyadarshani, K. N.; Singh, S. and Naugarhiya, A. Dual metal double gate Ge-pocket TFET (DMG-DG-Ge-Pocket TFET) with hetero dielectric: DC & analog performance projections. In Silicon, 14 (4): 1593-1604, 2022.

  2. • Priyadarshani, K. N.; Singh, S. and Singh, K. A novel self-aligned dopingless symmetric tunnel field effect transistor (DL-STFET): A process variations tolerant design. In Silicon, 14 (1): 229-237, 2022.

  3. • Priyadarshani, K. N.; Singh, S. and Singh, K. Ultra steep Ge-source dopingless tunnelling field effect transistor with enhanced drive current: DC to linearity characteristics analysis. In Silicon, 14 (11): 5863-5876, 2022.

  4. • Priyadarshani, K. N. and Singh, S. Double Metal Double Gate Hetero-oxide Tunnel FET: An Analytical Model. In Silicon, 14 (12): 7017-7024, 2022.

  5. • Priyadarshani, K. N.; Singh, S. and Mohammed, M. KA Gate-all-around junctionless FET based label-free dielectric/charge modulation detection of SARS-CoV-2 virus. In RSC advances, 12 (15): 9202-9209, 2022.

  6. • Kumar, H.; Singh, S. and Priyadarshani, K. N. Electrostatically Doped Schottky barrier tunnel field effect transistor. In International Journal of Electronics Letters, 10 (3): 333-343, 2022.

2021

  1. • Kumar, H.; Singh, S.; Priyadarshani, K. N.; Ghosh, J. and Naugarhiya, A. Contact engineered charge plasma junctionless transistor for suppressing tunneling leakage. In International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 34 (1): e2812, 2021.

  2. • Priyadarshani, K. N.; Singh, S. and Naugarhiya, A. RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric. In Microelectronics Journal, 108: 104973, 2021.

  3. • Raj, A.; Singh, S.; Priyadarshani, K. N.; Arya, R. and Naugarhiya, A. Vertically Extended Drain Double Gate S i 1- x G ex Source Tunnel FET: Proposal & Investigation For Optimized Device Performance. In Silicon, 13 (8): 2589-2604, 2021.

  4. • Kumari, P.; Raj, A.; Priyadarshani, K. N. and Singh, S. Impact of temperature and interface trapped charges variation on the Analog/RF and linearity of vertically extended drain double gate Si0. 5Ge0. 5 source tunnel FET. In Microelectronics Journal, 113: 105077, 2021.

  5. • Priyadarshani, K. N.; Singh, S. and Singh, K. Analog/RF performance estimation of a dopingless symmetric tunnel field effect transistor. In Journal of Electronic Materials, 50 (8): 4962-4973, 2021.

  6. •; Priyadarshani, K. N. and Singh, S. Ultra sensitive label-free detection of biomolecules using vertically extended drain double gate Si₀. ₅Ge₀. ₅ source tunnel FET. In IEEE Transactions on NanoBioscience, 20 (4): 480-487, 2021.

In Proceedings

2021

  1. • Priyadarshani, K. N.; Singh, S. and Naugarhiya, A. Impact of Temperature on DC and Analog/RF Performance for DM-DG-Ge Pocket TFET. In Proceedings of International Conference on Communication and Artificial Intelligence: ICCAI 2020, pages 135-141, 2021.

  2. • Priyadarshani, K. N. and Singh, S. Impact of Underlap/Overlap of Germanium Source Dopingless Tunnel Field Effect Transistor (Ge-S-DLTFET). In Innovations in Cyber Physical Systems: Select Proceedings of ICICPS 2020, pages 231-237, Springer Singapore, 2021.